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J-GLOBAL ID：200902271369862559   Reference number：05A0679773

Efficiency of multiple atom doping in wide band gap semiconductors

バンドギャップの広い半導体への多数の原子ドーピングの効率
Author (2)：
MIYAZAKI Takehide

About MIYAZAKI Takehide

(National Inst. of Advanced Industrial Sci. and Technol., Tsukuba, JPN)

About National Inst. of Advanced Industrial Sci. and Technol., Tsukuba, JPN

, 
YAMASAKI Satoshi

About YAMASAKI Satoshi

(National Inst. of Advanced Industrial Sci. and Technol., Tsukuba, JPN)

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Material：
Applied Physics Letters  (Appl Phys Lett)

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Volume： 86  Issue： 26  Page： 261910.1-261910.3  Publication year： Jun. 27, 2005 
JST Material Number： H0613A  ISSN： 0003-6951  CODEN： APPLAB  Document type： Article
Article type： 短報  Country of issue： United States (USA)  Language： ENGLISH (EN)
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*semiconductor

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,...
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*forbidden band

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JST classification (1)：
JST classification
Category name(code) classified by JST.
Electric conduction in crystalline semiconductors 
(BM03043X)

About Electric conduction in crystalline semiconductors

Terms in the title (3)：
Terms in the title
Keywords automatically extracted from the title.
バンドギャップ

About バンドギャップ

, 
原子

About 原子

, 
ドーピング

About ドーピング


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