Art
J-GLOBAL ID：200902272316246895
Reference number：04A0255505
Quantitative Analysis of Strain in Silicon Crystals Using X-ray Pendelloesung Oscillations
X線Pendelloesung振動を利用したシリコン結晶内歪の定量的解析
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Author (1)：
Material：
Volume：
43
Issue：
2
Page：
841-842
Publication year：
Feb. 15, 2004
JST Material Number：
G0520B
ISSN：
0021-4922
Document type：
Article
Article type：
短報
Country of issue：
Japan (JPN)
Language：
ENGLISH (EN)
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Semi thesaurus term：
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
JST classification (2)：
JST classification
Category name(code) classified by JST.
X-ray diffraction methods
, Lattice defects in semiconductors
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