Art
J-GLOBAL ID：200902272803561380   Reference number：03A0697724

Low On-resistance Trench Lateral Power MOSFET Using 0.6μm Smart Power Technology

0.6μm-Smart Power技術を用いた低オン抵抗トレンチ横型パワーMOSFET
Author (3)：
SAWADA M

About SAWADA M

(Fuji Electric Co., Ltd., Tokyo, JPN)

About Fuji Electric Co., Ltd., Tokyo, JPN

, 
IWAYA M

About IWAYA M

(Fuji Electric Co., Ltd., Tokyo, JPN)

About Fuji Electric Co., Ltd., Tokyo, JPN

, 
FUJISHIMA N

About FUJISHIMA N

(Fuji Electric Co., Ltd., Tokyo, JPN)

About Fuji Electric Co., Ltd., Tokyo, JPN


Material：
Fuji Electric Review  (Fuji Electr Rev)

About Fuji Electric Review


Volume： 49  Issue： 3  Page： 95-98  Publication year： 2003 
JST Material Number： S0167A  ISSN： 0429-8284  CODEN： FUERB  Document type： Article
Article type： 解説  Country of issue： Japan (JPN)  Language： ENGLISH (EN)
Thesaurus term：
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
*MOSFET

About MOSFET

,...
Semi thesaurus term：
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
power MOSFET

About power MOSFET

,...
   To see more with JDream III (charged).   {{ this.onShowAbsJLink("http://jdream3.com/lp/jglobal/index.html?docNo=03A0697724&from=J-GLOBAL&jstjournalNo=S0167A") }}
JST classification (1)：
JST classification
Category name(code) classified by JST.
Transistors 
(NC03070N)

About Transistors

Terms in the title (5)：
Terms in the title
Keywords automatically extracted from the title.
SMART

About SMART

, 
オン抵抗

About オン抵抗

, 
トレンチ

About トレンチ

, 
横型

About 横型

, 
パワーMOSFET

About パワーMOSFET


Return to Previous Page

TOP

BOTTOM