Art
J-GLOBAL ID:200902273574809310   Reference number:07A0478730

Influence of High Temperature in the Growth of Low Dislocation Content AlN Bridge Layers on Patterned 6H-SiC Substrates by Metalorganic Vapor Phase Epitaxy

有機金属気相エピタクシーによるパータン化6H-SiC基板上への低転位AlNブリッジ層の成長における高温の影響
Author (6):
Material:
Volume: 46  Issue: 12-16  Page: L307-L310  Publication year: Apr. 25, 2007 
JST Material Number: F0599B  ISSN: 0021-4922  Document type: Article
Article type: 短報  Country of issue: Japan (JPN)  Language: ENGLISH (EN)
Thesaurus term:
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
,...
Semi thesaurus term:
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
,...
   To see more with JDream III (charged).   {{ this.onShowAbsJLink("http://jdream3.com/lp/jglobal/index.html?docNo=07A0478730&from=J-GLOBAL&jstjournalNo=F0599B") }}
JST classification (1):
JST classification
Category name(code) classified by JST.
Semiconductor thin films 

Return to Previous Page