Plasma Etch Rates of Porous Silica Low-k Films with Different Dielectric Constants

ONO Tetsuo; TAKAHASHI Hideki; KINOSHITA Keizo; FUJII Nobutoshi; HATA Nobuhiro; KIKKAWA Takamaro; KIKKAWA Takamaro

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J-GLOBAL ID：200902276418533738 Reference number：06A1038952

Plasma Etch Rates of Porous Silica Low-k Films with Different Dielectric Constants

異なる誘電率の多孔質シリカ低k膜のプラズマエッチ速度

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Material：
Volume： 45 Issue： 11 Page： 8873-8875 Publication year： Nov. 15, 2006
JST Material Number： G0520B ISSN： 0021-4922 Document type： Article
Article type：原著論文 Country of issue： Japan (JPN) Language： ENGLISH (EN)

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Manufacturing technology of solid-state devices

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