Art

J-GLOBAL ID：200902276513289844   Reference number：06A0134814

Periodic Coulomb oscillations in Si single-electron transistor based on multiple islands

多重島に基づくSi単一電子トランジスタにおける周期的Coulomb振動

Author (3)： OHKURA Kensaku (Res. Center for Nanodevices and Systems, Hiroshima Univ., 1-4-2 Kagamiyama, Higashi-Hiroshima, Hiroshima 739-8527, JPN) ,  KITADE Tetsuya (Res. Center for Nanodevices and Systems, Hiroshima Univ., 1-4-2 Kagamiyama, Higashi-Hiroshima, Hiroshima 739-8527, JPN) ,  NAKAJIMA Anri (Res. Center for Nanodevices and Systems, Hiroshima Univ., 1-4-2 Kagamiyama, Higashi-Hiroshima, Hiroshima 739-8527, JPN)
Material： Journal of Applied Physics  (Journal of General Physics and its Application to Other Sciences and to Industry)
Volume： 98  Issue： 12  Page： 124503-124503-6  Publication year： Dec. 15, 2005 
JST Material Number： C0266A  ISSN： 0021-8979  CODEN： JAPIAU  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Thesaurus term： *silicon ,...
Semi thesaurus term： Coulomb振動

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JST classification (2)： Electrical properties of interfaces in general  (BM03081H) ,  Other contacts  (BM03088W)

Terms in the title (4)： 多重 ,  Si ,  単一電子トランジスタ ,  Coulomb振動