Improved performance of 1.3μm multilayer InAs quantum-dot lasers using a high-growth-temperature GaAs spacer layer

LIU H Y; SELLERS I R; BADCOCK T J; MOWBRAY D J; SKOLNICK M S; GROOM K M; GUTIERREZ M; HOPKINSON M; BEANLAND R

Art

J-GLOBAL ID：200902277464253541 Reference number：04A0587312

Improved performance of 1.3μm multilayer InAs quantum-dot lasers using a high-growth-temperature GaAs spacer layer

高温成長GaAsスペーサ層を用いた1.3μm多重層InAs量子ドットレーザの改良動作

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Material：
Volume： 85 Issue： 5 Page： 704-706 Publication year： Aug. 02, 2004
JST Material Number： H0613A ISSN： 0003-6951 CODEN： APPLAB Document type： Article
Article type：短報 Country of issue： United States (USA) Language： ENGLISH (EN)

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Semiconductor lasers

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