Art

J-GLOBAL ID：200902277794551891   Reference number：08A0637826

Ferromagnetism and possible application in spintronics of transition-metal-doped ZnO films

遷移金属ドープZnO膜の強磁性とスピントロニクス応用の可能性

Author (5)： PAN F. (Lab. of Advanced Materials, Dep. of Materials Sci. and Engineering, Tsinghua Univ., Beijing 100084, CHN) ,  SONG C. (Lab. of Advanced Materials, Dep. of Materials Sci. and Engineering, Tsinghua Univ., Beijing 100084, CHN) ,  LIU X.j. (Lab. of Advanced Materials, Dep. of Materials Sci. and Engineering, Tsinghua Univ., Beijing 100084, CHN) ,  YANG Y.c. (Lab. of Advanced Materials, Dep. of Materials Sci. and Engineering, Tsinghua Univ., Beijing 100084, CHN) ,  ZENG F. (Lab. of Advanced Materials, Dep. of Materials Sci. and Engineering, Tsinghua Univ., Beijing 100084, CHN)
Material： Materials Science & Engineering. R. Reports  (Materials Science and Engineering. R. Reports)
Volume： 62  Issue： 1  Page： 1-35  Publication year： Jun. 30, 2008 
JST Material Number： T0341A  ISSN： 0927-796X  Document type： Article
Article type： 文献レビュー  Country of issue： Netherlands (NLD)  Language： ENGLISH (EN)

Thesaurus term： *zinc oxide ,  *transition metal ,  *doping ,  *ferromagnetism ,  *spintronics ,  magnetic semiconductor ,  magnetic property ,  magnetic order ,  concentration(ratio) ,  partial pressure ,  growth rate ,  substrate(plate) ,  lattice defect ,  carrier ,  tunnel junction ,  injection(pour) ,  FET ,  *magnetic thin film ,  process parameter ,  magnetic moment ,  XANES ,  X-ray diffraction ,  Raman spectrum ,  Curie temperature ,  magnetoresistance effect ,  magnetization ,  ferroelectricity ,  transistor ,  band gap ,  strain ,  high resolution electron microscope ,  substrate temperature ,  second phase ,  exchange interaction ,  dielectric polarization
Semi thesaurus term： HRTEM ,  TMR ,  X-Ray Diffraction ,  anneal ,  spin transistor ,  spin injection ,  piezoelectric effect ,  zinc oxide ,  *diluted magnetic semiconductor ,  local structure ,  structural defect of crystal ,  oxygen partial pressure ,  magnetic tunnel junction ,  additive element ,  field effect transistor

JST classification (4)： Magnetic properties of oxides  (BM06050E) ,  Electric conduction in crystalline semiconductors  (BM03043X) ,  X-ray spectra in general.Including X-ray  (BM08101P) ,  Transistors  (NC03070N)

Terms in the title (7)： 遷移金属 ,  ドープ ,  ZnO ,  強磁性 ,  スピントロニクス ,  応用 ,  可能性