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J-GLOBAL ID:200902278198663891   Reference number:06A0300822

Structure and formation mechanism of V defects in multiple InGaN/GaN quantum well layers

多重InGaN/GaN量子井戸層におけるV欠陥の構造と形成機構
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Volume: 99  Issue:Page: 073505-073505-6  Publication year: Apr. 01, 2006 
JST Material Number: C0266A  ISSN: 0021-8979  CODEN: JAPIAU  Document type: Article
Article type: 原著論文  Country of issue: United States (USA)  Language: ENGLISH (EN)
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Lattice defects in semiconductors  ,  Semiconductor thin films 
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