Art

J-GLOBAL ID：200902281048754040   Reference number：06A0786905

Realization of 1.3μm InAs quantum dots with high-density, uniformity, and quality

高密度,一様性そして品質をもつ1.3μmInAs量子ドットの実現

Author (4)： AMANO Takeru (National Inst. of Advanced Industrial Sci. and Technol. (AIST) and CREST, Photonics Res. Inst., Japan Sci. and ...) ,  SUGAYA Takeyoshi (National Inst. of Advanced Industrial Sci. and Technol. (AIST) and CREST, Photonics Res. Inst., Japan Sci. and ...) ,  YAMAUCHI Shohgo (National Inst. of Advanced Industrial Sci. and Technol. (AIST) and CREST, Photonics Res. Inst., Japan Sci. and ...) ,  KOMORI Kazuhiro (National Inst. of Advanced Industrial Sci. and Technol. (AIST) and CREST, Photonics Res. Inst., Japan Sci. and ...)
Material： Journal of Crystal Growth  (J Cryst Growth)
Volume： 295  Issue： 2  Page： 162-165  Publication year： Oct. 01, 2006 
JST Material Number： B0942A  ISSN： 0022-0248  Document type： Article
Article type： 原著論文  Country of issue： Netherlands (NLD)  Language： ENGLISH (EN)

Thesaurus term： *indium arsenide ,...

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JST classification (1)： Luminescence of semiconductors  (BM08092S)

Terms in the title (3)： 高密度 ,  一様性 ,  量子ドット