Art

J-GLOBAL ID：200902282004358152   Reference number：07A0862856

Electronic transport in Ta2O5 resistive switch

Ta₂O₅から成る抵抗スイッチにおける電子輸送

Author (6)： SAKAMOTO Toshitsugu (Nano Electronics Res. Laboratories, NEC Corp., 34 Miyukigaoka, Tsukuba, Ibaraki 305-8501, JPN) ,  LISTER Kevin (Nano Electronics Res. Laboratories, NEC Corp., 34 Miyukigaoka, Tsukuba, Ibaraki 305-8501, JPN) ,  BANNO Naoki (Nano Electronics Res. Laboratories, NEC Corp., 34 Miyukigaoka, Tsukuba, Ibaraki 305-8501, JPN) ,  HASEGAWA Tsuyoshi (Nanomaterials Lab., National Inst. for Materials Sci., 1-1 Namiki, Tsukuba, Ibaraki 305-0044, JPN) ,  TERABE Kazuya (Nanomaterials Lab., National Inst. for Materials Sci., 1-1 Namiki, Tsukuba, Ibaraki 305-0044, JPN) ,  AONO Masakazu (Nanomaterials Lab., National Inst. for Materials Sci., 1-1 Namiki, Tsukuba, Ibaraki 305-0044, JPN)
Material： Applied Physics Letters  (Appl Phys Lett)
Volume： 91  Issue： 9  Page： 092110-092110-3  Publication year： Aug. 27, 2007 
JST Material Number： H0613A  ISSN： 0003-6951  CODEN： APPLAB  Document type： Article
Article type： 短報  Country of issue： United States (USA)  Language： ENGLISH (EN)

Thesaurus term： *tantalum oxide ,...
Semi thesaurus term： tunnel barrier

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JST classification (1)： Electric conduction in semiconductors and insulators in general  (BM03041P)

Terms in the title (2)： Ta2O5 ,  電子輸送