Art

J-GLOBAL ID：200902282836030939   Reference number：06A0630702

Vacancy-impurity complexes in polycrystalline Si used as gate electrodes of HfSiON-based metal-oxide-semiconductors probed using monoenergetic positron beams

単一エネルギーの陽電子ビームを用いて調べた,HfSiON系金属-酸化物-半導体のゲート電極として使われる多結晶Si中の空孔-不純物複合体

Author (10)： UEDONO A. (Inst. of Applied Physics, Univ. of Tsukuba, Tsukuba, Ibaraki 305-8573, JPN) ,  IKEUCHI K. (Inst. of Applied Physics, Univ. of Tsukuba, Tsukuba, Ibaraki 305-8573, JPN) ,  OTSUKA T. (Inst. of Applied Physics, Univ. of Tsukuba, Tsukuba, Ibaraki 305-8573, JPN) ,  YAMABE K. (Inst. of Applied Physics, Univ. of Tsukuba, Tsukuba, Ibaraki 305-8573, JPN) ,  EGUCHI K. (Semiconductor Technol. Academic Res. Center, 17-2, Shin Yokohama 3-chome, Kohoku, Yokohama 222-0033, JPN) ,  TAKAYANAGI M. (Semiconductor Technol. Academic Res. Center, 17-2, Shin Yokohama 3-chome, Kohoku, Yokohama 222-0033, JPN) ,  ISHIBASHI S. (Res. Inst. for Computational Sciences (RICS), National Inst. of Advanced Industrial Sci. and Technol. (AIST), 1-1-1 ...) ,  OHDAIRA T. (Res. Inst. of Instrumentation Frontier (RIIF), National Inst. of Advanced Industrial Sci. and Technol. (AIST), 1-1-1 ...) ,  MURAMATSU M. (Res. Inst. of Instrumentation Frontier (RIIF), National Inst. of Advanced Industrial Sci. and Technol. (AIST), 1-1-1 ...) ,  SUZUKI R. (Res. Inst. of Instrumentation Frontier (RIIF), National Inst. of Advanced Industrial Sci. and Technol. (AIST), 1-1-1 ...)
Material： Journal of Applied Physics  (Journal of General Physics and its Application to Other Sciences and to Industry)
Volume： 100  Issue： 3  Page： 034509-034509-6  Publication year： Aug. 01, 2006 
JST Material Number： C0266A  ISSN： 0021-8979  CODEN： JAPIAU  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Thesaurus term： *MOSFET ,...

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JST classification (2)： Lattice defects in semiconductors  (BK12040Q) ,  Metal-insulator-semiconductor structures  (BM03085X)

Terms in the title (9)： エネルギー ,  陽電子ビーム ,  HfSiON ,  酸化物 ,  ゲート電極 ,  多結晶Si ,  空孔 ,  不純物 ,  複合体