Art
J-GLOBAL ID：200902283843470789   Reference number：06A0339469

Highly sensitive InGaAs/InAlAs quantum wire photo-FET

高感度InGaAs/InAlAs量子細線フォトFET
Author (2)：
OGURA M.

About OGURA M.

(National Inst. Advanced Industrial Sci. and Technol., Tsukuba, JPN)

About National Inst. Advanced Industrial Sci. and Technol., Tsukuba, JPN

, 
SUGAYA T.

About SUGAYA T.

(National Inst. Advanced Industrial Sci. and Technol., Tsukuba, JPN)

About National Inst. Advanced Industrial Sci. and Technol., Tsukuba, JPN


Material：
Electronics Letters  (Electron Lett)

About Electronics Letters


Volume： 42  Issue： 7  Page： 413-414  Publication year： Mar. 30, 2006 
JST Material Number： A0887A  ISSN： 0013-5194  CODEN： ELLEAK  Document type： Article
Article type： 短報  Country of issue： United Kingdom (GBR)  Language： ENGLISH (EN)
Thesaurus term：
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indium gallium arsenide

About indium gallium arsenide

,...
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JST classification (1)：
JST classification
Category name(code) classified by JST.
Photodetectors 
(NC03083X)

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Terms in the title (6)：
Terms in the title
Keywords automatically extracted from the title.
高感度

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, 
InGaAs

About InGaAs

, 
InAlAs

About InAlAs

, 
量子細線

About 量子細線

, 
フォト

About フォト

, 
FET

About FET


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