Art

J-GLOBAL ID：200902285259831551   Reference number：09A0383071

Graphene Formation on a 3C-SiC(111) Thin Film Grown on Si(110) Substrate

Si(110)基板上に成長した3C-SiC(111)薄膜上のグラフェン形成

Author (5)： SUEMITSU Maki (Res. Inst. of Electrical Communication, Tohoku Univ., JPN) ,  SUEMITSU Maki (CREST, Japan Sci. and Technol. Agency, JPN) ,  MIYAMOTO Yu (Res. Inst. of Electrical Communication, Tohoku Univ., JPN) ,  HANDA Hiroyuki (Res. Inst. of Electrical Communication, Tohoku Univ., JPN) ,  KONNO Atsushi (Res. Inst. of Electrical Communication, Tohoku Univ., JPN)
Material： e-Journal of Surface Science and Nanotechnology (Web)  (表面科学とナノテクノロジー)
Volume： 7  Page： 311-313 (J-STAGE)  Publication year： 2009 
JST Material Number： U0016A  ISSN： 1348-0391  Document type： Article
Article type： 原著論文  Country of issue： Japan (JPN)  Language： ENGLISH (EN)

Thesaurus term： *Graphite ,  *epitaxy ,  silicon ,  silicon carbide ,  annealing (heat treatment) ,  high vacuum ,  strain ,  *graphene ,  3C-silicon carbide
Semi thesaurus term： *epitaxial growth ,  anneal ,  3C-SiC

JST classification (3)： Atomic and molecular clusters  (BH09030O) ,  Solid-gos interface in general.  (CB12041H) ,  Inorganic compounds and elements in general  (CD01010D)

Substance index (1)： Methylsilane

Reference (16)：

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Terms in the title (5)： Si ,  成長 ,  3C-SiC ,  薄膜 ,  グラフェン