Art

J-GLOBAL ID：200902286558625140   Reference number：08A0340679

High brightness and high polarization electron source using transmission photocathode with GaAs-GaAsP superlattice layers

GaAs-GaAsP超格子層を持った透過型光電陰極を用いた高輝度高偏極電子源

Author (17)： YAMAMOTO Naoto (Graduate School of Sci., Nagoya Univ., Nagoya 464-8602, JPN) ,  NAKANISHI Tsutomu (Graduate School of Sci., Nagoya Univ., Nagoya 464-8602, JPN) ,  MANO Atsushi (Graduate School of Sci., Nagoya Univ., Nagoya 464-8602, JPN) ,  NAKAGAWA Yasuhide (Graduate School of Sci., Nagoya Univ., Nagoya 464-8602, JPN) ,  OKUMI Shoji (Graduate School of Sci., Nagoya Univ., Nagoya 464-8602, JPN) ,  YAMAMOTO Masahiro (Graduate School of Sci., Nagoya Univ., Nagoya 464-8602, JPN) ,  KONOMI Taro (Graduate School of Sci., Nagoya Univ., Nagoya 464-8602, JPN) ,  JIN Xiuguang (Graduate School of Engineering, Nagoya Univ., Nagoya 464-8603, JPN) ,  UJIHARA Toru (Graduate School of Engineering, Nagoya Univ., Nagoya 464-8603, JPN) ,  TAKEDA Yoshikazu (Graduate School of Engineering, Nagoya Univ., Nagoya 464-8603, JPN) ,  OHSHIMA Takashi (Central Res. Lab., Hitachi Ltd., Tokyo 185-8601, JPN) ,  SAKA Takashi (Daido Inst. of Technol., Nagoya 457-8531, JPN) ,  KATO Toshihiro (Daido Steel Co. Ltd., Nagoya 457-8531, JPN) ,  HORINAKA Hiromichi (Fac. of Engineering, Osaka Prefecture Univ., Osaka 599-8531, JPN) ,  YASUE Tsuneo (Fundamental Electronics Res. Inst., Osaka Electro-Communication Univ., Osaka 572-8530, JPN) ,  KOSHIKAWA Takanori (Fundamental Electronics Res. Inst., Osaka Electro-Communication Univ., Osaka 572-8530, JPN) ,  KUWAHARA Makoto (Res. Inst. of Electrical Communication Tohoku Univ., Sendai 980-8577, JPN)
Material： Journal of Applied Physics  (Journal of General Physics and its Application to Other Sciences and to Industry)
Volume： 103  Issue： 6  Page： 064905  Publication year： Mar. 15, 2008 
JST Material Number： C0266A  ISSN： 0021-8979  CODEN： JAPIAU  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Thesaurus term： *electron source ,  *polarized beam ,  *gallium arsenide ,  *gallium compound ,  arsenide ,  phosphide ,  compound semiconductor ,  superlattice ,  layer ,  *photoelectric cathode ,  luminance ,  laser beam ,  lifetime ,  electric charge distribution ,  density ,  electric current ,  spin polarization ,  quantum efficiency
Semi thesaurus term： *gallium arsenide phosphide ,  レーザスポット ,  超格子層 ,  electric charge density ,  電荷密度寿命 ,  *透過型光電陰極 ,  *偏極電子源 ,  放出電流

JST classification (1)： Electron and ion sources  (BD02020U)

Terms in the title (8)： GaAs ,  GaAsP ,  超格子 ,  透過 ,  光電陰極 ,  高輝度 ,  偏極 ,  電子源