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J-GLOBAL ID：200902288189816893   Reference number：04A0685830

Surface-plasmon-enhanced light emitters based on InGaN quantum wells

InGaN量子井戸系の表面プラズモン増強発光体
Author (6)：
OKAMOTO K

About OKAMOTO K

(California Inst. Technol., California, USA)

About California Inst. Technol., California, USA

, 
NIKI I

About NIKI I

(California Inst. Technol., California, USA)

About California Inst. Technol., California, USA

, 
SHVARTSER A

About SHVARTSER A

(California Inst. Technol., California, USA)

About California Inst. Technol., California, USA

, 
NARUKAWA Y

About NARUKAWA Y

(Nichia Corp., Tokushima, JPN)

About Nichia Corp., Tokushima, JPN

, 
MUKAI T

About MUKAI T

(Nichia Corp., Tokushima, JPN)

About Nichia Corp., Tokushima, JPN

, 
SCHERER A

About SCHERER A

(California Inst. Technol., California, USA)

About California Inst. Technol., California, USA


Material：
Nature Materials  (Nat Mater)

About Nature Materials


Volume： 3  Issue： 9  Page： 601-605  Publication year： Sep. 2004 
JST Material Number： W1364A  ISSN： 1476-1122  Document type： Article
Article type： 短報  Country of issue： United Kingdom (GBR)  Language： ENGLISH (EN)
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All keywords is available on JDreamIII(charged).
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*light emitting diode

About light emitting diode

,...
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JST classification (1)：
JST classification
Category name(code) classified by JST.
Light emitting devices 
(NC03082G)

About Light emitting devices

Terms in the title (5)：
Terms in the title
Keywords automatically extracted from the title.
InGaN

About InGaN

, 
量子井戸

About 量子井戸

, 
表面プラズモン

About 表面プラズモン

, 
増強

About 増強

, 
発光体

About 発光体


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