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J-GLOBAL ID:200902288791970950   Reference number:03A0547761

Thermal oxidation of (0001) 4H-SiC at high temperatures in ozone-admixed oxygen gas ambient

オゾン混合酸素ガス雰囲気中での高温での(0001)4H-SiCの熱酸化
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Material:
Volume: 83  Issue:Page: 884-886  Publication year: Aug. 04, 2003 
JST Material Number: H0613A  ISSN: 0003-6951  CODEN: APPLAB  Document type: Article
Article type: 短報  Country of issue: United States (USA)  Language: ENGLISH (EN)
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Metal-insulator-semiconductor structures  ,  Oxide thin films 
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