Thermal oxidation of (0001) 4H-SiC at high temperatures in ozone-admixed oxygen gas ambient

KOSUGI R; FUKUDA K; ARAI K

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J-GLOBAL ID：200902288791970950 Reference number：03A0547761

Thermal oxidation of (0001) 4H-SiC at high temperatures in ozone-admixed oxygen gas ambient

オゾン混合酸素ガス雰囲気中での高温での(0001)4H-SiCの熱酸化

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Author (3)： , ,
Material：
Volume： 83 Issue： 5 Page： 884-886 Publication year： Aug. 04, 2003
JST Material Number： H0613A ISSN： 0003-6951 CODEN： APPLAB Document type： Article
Article type：短報 Country of issue： United States (USA) Language： ENGLISH (EN)

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Metal-insulator-semiconductor structures , Oxide thin films

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