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J-GLOBAL ID:200902289206373131   Reference number:05A1022842

Morphological Characteristics of a-Plane GaN Grown on r-Plane Sapphire by Metalorganic Vapor-Phase Epitaxy

有機金属気相エピタクシーによるr面サファイア上a面GaN成長の形態学的特性
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Volume: 44  Issue: 11  Page: 7931-7933  Publication year: Nov. 15, 2005 
JST Material Number: G0520B  ISSN: 0021-4922  Document type: Article
Article type: 原著論文  Country of issue: Japan (JPN)  Language: ENGLISH (EN)
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Semiconductor thin films  ,  Surface structure of semiconductors 
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