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J-GLOBAL ID:200902289206373131
Reference number:05A1022842
Morphological Characteristics of a-Plane GaN Grown on r-Plane Sapphire by Metalorganic Vapor-Phase Epitaxy
有機金属気相エピタクシーによるr面サファイア上a面GaN成長の形態学的特性
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Author (3):
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Material:
Volume:
44
Issue:
11
Page:
7931-7933
Publication year:
Nov. 15, 2005
JST Material Number:
G0520B
ISSN:
0021-4922
Document type:
Article
Article type:
原著論文
Country of issue:
Japan (JPN)
Language:
ENGLISH (EN)
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JST classification (2):
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Category name(code) classified by JST.
Semiconductor thin films
, Surface structure of semiconductors
Reference (13):
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1) <I>Introduction to Nitride Semiconductor Blue Laser and Light Emitting Diodes</I>, eds. S. Nakamura and S. F. Chichibu (Taylor & Francis, London, New York, 2000).
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2) W. A. Melton and J. I. Pankove: J. Cryst. Growth 178 (1997) 168.
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3) M. D. Craven, S. H. Lim, F. Wu, J. S. Speck and S. P. DenBaars: Appl. Phys. Lett. 81 (2002) 469.
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4) M. D. Craven, P. Waltereit, J. S. Speck and S. P. DenBaars: Appl. Phys. Lett. 84 (2004) 496.
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5) M. D. Craven, F. Wu, A. Chakraborty, B. Imer, U. K. Mishra, S. P. DenBaars and J. S. Speck: Appl. Phys. Lett. 84 (2004) 1281.
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