Art
J-GLOBAL ID：200902289398646683   Reference number：04A0390868

Growth of dislocation-free crystal in highly lattice mismatched heteroepitaxy-Microchannel Epitaxy: conceptual origin and future prospects-

格子定数差の大きなヘテロエピタキシーにおける無転位結晶成長技術-マイクロチャネルエピタキシー:発想の原点と将来展望-
Author (1)：
NISHINAGA TATAU

About NISHINAGA TATAU

(豊橋技科大)

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Material：
応用物理  (JSAP International)

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Volume： 73  Issue： 5  Page： 579-586  Publication year： May. 10, 2004 
JST Material Number： F0252A  ISSN： 0369-8009  CODEN： OYBSA  Document type： Article
Article type： 解説  Country of issue： Japan (JPN)  Language： JAPANESE (JA)
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*epitaxy

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,...
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Thesaurus term/Semi thesaurus term
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マイクロチャネルエピタキシー

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JST classification (2)：
JST classification
Category name(code) classified by JST.
Crystal growth of semiconductors 
(BK13040X)

About Crystal growth of semiconductors

,  Semiconductor thin films 
(BK14040E)

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Reference (24)：
ｍore...
Terms in the title (6)：
Terms in the title
Keywords automatically extracted from the title.
格子定数

About 格子定数

, 
ヘテロエピタキシー

About ヘテロエピタキシー

, 
無転位結晶

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, 
成長

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, 
発想

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, 
将来展望

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