Art
J-GLOBAL ID：200902290378271746
Reference number：03A0692626
Low-Temperature Boron Gettering for Improving the Carrier Lifetime in Fe-Contaminated Bifacial Silicon Solar Cells with n+pp+ Back-Surface-Field Structure
n+pp+背面電場構造をもつFe汚染両面シリコン太陽電池におけるキャリア寿命を改善するための低温ほう素ゲッタリング
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Author (6)：
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Material：
Volume：
42
Issue：
9A
Page：
5397-5404
Publication year：
Sep. 15, 2003
JST Material Number：
G0520B
ISSN：
0021-4922
Document type：
Article
Article type：
原著論文
Country of issue：
Japan (JPN)
Language：
ENGLISH (EN)
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JST classification (2)：
JST classification
Category name(code) classified by JST.
Manufacturing technology of solid-state devices
, Solar cell
Reference (23)：
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1) T. Warabisako, K. Matsukuma, S. Kokunai, Y. Kida, T. Uematsu and H. Yagi: Proc. 23rd IEEE Photovoltaic Specialist Conf., 1993, p. 248.
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2) A. Moehlieck, I. Zanesco and A. Luque: Proc. 1st World Conf. and Exhibition on Photovoltaic Solar Energy Conversion 1994, p. 1663.
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3) K. A. Muenzer, K. H. Holdermann, R. E. Schlosser and S. Sterk: Proc. 2nd World Conf. and Exhibition on Photovoltaic Solar Energy Conversion, 1998, p. 1464.
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4) T. Uematsu, K. Tsutsui, Y. Yazawa, T. Warabisako, I. Araki, Y. Eguchi and T. Joge: Proc. 12th Int. Photovoltaic Science and Engineering Conf., 2001, p. 805.
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5) S. Nadahara: Proc. Defects in Silicon II, eds. W. M. Bullis, U. Gosele and F. Shimura (Electrochemical Society, Pennigton, NJ, 1991) p. 667.
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