低温STMによるSi(111)7×7初期酸化表面の局所状態密度像

SHIMPO TAKAMITSU; HORIGUCHI NOBUHIRO; MIYAO MASAHIRO

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J-GLOBAL ID：200902294059183775 Reference number：04A0343823

低温STMによるSi(111)7×7初期酸化表面の局所状態密度像

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Author (3)： , ,
Material：
Volume： 51st Issue： 2 Page： 726 Publication year： Mar. 28, 2004
JST Material Number： Y0054A Document type： Proceedings
Article type：短報 Country of issue： Japan (JPN) Language： JAPANESE (JA)

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Study of adsorption by physical means , Electronic structure of surfaces , Surface structure of semiconductors

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