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J-GLOBAL ID：200902294569545477   Reference number：06A0951060

Size-dependent photoluminescence of hexagonal nanopillars with single InGaAs/GaAs quantum wells fabricated by selective-area metal organic vapor phase epitaxy

選択域有機金属気相エピタクシーにより製造した単一InGaAs/GaAs量子井戸をもつ六方ナノピラーのサイズ依存光ルミネセンス

Author (5)： YANG L. (Res. Center for Integrated Quantum Electronics (RCIQE), Graduate School of Electronics and Information Engineering ...) ,  MOTOHISA J. (Res. Center for Integrated Quantum Electronics (RCIQE), Graduate School of Electronics and Information Engineering ...) ,  TAKEDA J. (Res. Center for Integrated Quantum Electronics (RCIQE), Graduate School of Electronics and Information Engineering ...) ,  TOMIOKA K. (Res. Center for Integrated Quantum Electronics (RCIQE), Graduate School of Electronics and Information Engineering ...) ,  FUKUI T. (Res. Center for Integrated Quantum Electronics (RCIQE), Graduate School of Electronics and Information Engineering ...)
Material： Applied Physics Letters  (Appl Phys Lett)
Volume： 89  Issue： 20  Page： 203110-203110-3  Publication year： Nov. 13, 2006 
JST Material Number： H0613A  ISSN： 0003-6951  CODEN： APPLAB  Document type： Article
Article type： 短報  Country of issue： United States (USA)  Language： ENGLISH (EN)

Thesaurus term： compound semiconductor ,...
Semi thesaurus term： MOVPE ,...

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JST classification (2)： Semiconductor thin films  (BK14040E) ,  Luminescence of semiconductors  (BM08092S)

Terms in the title (7)： 有機金属気相エピタクシー ,  InGaAs ,  GaAs ,  量子井戸 ,  ナノピラー ,  サイズ ,  光ルミネセンス