Art
J-GLOBAL ID：200902297033665606   Reference number：05A1053879

C-Band 150 W-Class GaN Power HEMT

C帯150W級GaN電力HEMT
Author (3)：
MATSUSHITA KEIICHI

About MATSUSHITA KEIICHI

(東芝)

About 東芝

, 
SAKURAI HIROYUKI

About SAKURAI HIROYUKI

(東芝)

About 東芝

, 
TAKAGI KAZUTAKA

About TAKAGI KAZUTAKA

(東芝)

About 東芝


Material：
東芝レビュー  (Toshiba Review)

About 東芝レビュー


Volume： 60  Issue： 12  Page： 32-35  Publication year： Dec. 01, 2005 
JST Material Number： F0360A  ISSN： 0372-0462  CODEN： TORBA  Document type： Article
Article type： 解説  Country of issue： Japan (JPN)  Language： JAPANESE (JA)
Thesaurus term：
Thesaurus term/Semi thesaurus term
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All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
*HEMT

About HEMT

,...
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JST classification (1)：
JST classification
Category name(code) classified by JST.
Transistors 
(NC03070N)

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Terms in the title (3)：
Terms in the title
Keywords automatically extracted from the title.
C帯

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, 
GaN

About GaN

, 
電力HEMT

About 電力HEMT


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