Art

J-GLOBAL ID：200902297261214584   Reference number：09A0408240

Growth of single-crystal SiO₂ clusters on Si(001) surface

Si(001)面上における単結晶SiO₂クラスタの成長

Author (5)： TANEMURA Tetsuo (Dep. of Applied Physics and Chemistry, The Univ. of Electro-Communications, 1-5-1 Chofugaoka, Chofu, Tokyo 182-8585, JPN) ,  SATO Seiichi (Dep. of Applied Physics and Chemistry, The Univ. of Electro-Communications, 1-5-1 Chofugaoka, Chofu, Tokyo 182-8585, JPN) ,  KUNDU Manisha (Dep. of Applied Physics and Chemistry, The Univ. of Electro-Communications, 1-5-1 Chofugaoka, Chofu, Tokyo 182-8585, JPN) ,  YAMADA Chikashi (Dep. of Applied Physics and Chemistry, The Univ. of Electro-Communications, 1-5-1 Chofugaoka, Chofu, Tokyo 182-8585, JPN) ,  MURATA Yoshitada (Dep. of Applied Physics and Chemistry, The Univ. of Electro-Communications, 1-5-1 Chofugaoka, Chofu, Tokyo 182-8585, JPN)
Material： Journal of Applied Physics  (Journal of General Physics and its Application to Other Sciences and to Industry)
Volume： 105  Issue： 7  Page： 074310  Publication year： Apr. 01, 2009 
JST Material Number： C0266A  ISSN： 0021-8979  CODEN： JAPIAU  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Thesaurus term： *silicon dioxide ,  single crystal ,  *cluster ,  wafer ,  amorphous silicon ,  thermal oxidation ,  *crystal growth ,  Si wafer

JST classification (1)： Oxide thin films  (BK14050P)

Terms in the title (3)： Si ,  クラスタ ,  成長