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J-GLOBAL ID：200902298274413353   Reference number：04A0570481

Negative Bias Temperature Instability (NBTI) in Ultra-thin Gate Oxide

極薄ゲート絶縁膜における負バイアス温度不安定性とその回復現象

Author (2)： MITANI YUICHIRO (東芝 研究開発セ) ,  SATAKE HIDEKI (東芝 研究開発セ)
Material： 電子情報通信学会技術研究報告  (IEICE Technical Report (Institute of Electronics, Information and Communication Engineers))
Volume： 104  Issue： 135(SDM2004 47-59)  Page： 25-30  Publication year： Jun. 22, 2004 
JST Material Number： S0532B  ISSN： 0913-5685  Document type： Proceedings
Article type： 原著論文  Country of issue： Japan (JPN)  Language： JAPANESE (JA)

Thesaurus term： *insulating film ,...
Semi thesaurus term： interface state ,...

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JST classification (1)： Transistors  (NC03070N)

Reference (16)：

• KIMIZUKA, N. The impact of bias temperature instability for direct-tunneling ultra-thin gate oxide on MOSFET scaling. Symposium on VLSI Technology, 1999. 1999, 73
• KIMIZUKA, N. NBTI enhancement by nitrogen incorporation into ultrathin gate oxide for 0.10mm gate CMOS generation. Symposium on VLSI Technology, 2000. 2000, 92
• LA ROSA, G. NBTI-channel hot carrier effects in PMOSFETs in advanced CMOS technologies. Proc. IEEE International Reliability Physics Symposium, 1997. 1997, 282
• UWASAWA, K. A new degradation mode of scaled p^+ polysilicon gate pMOSFETs induced by bias temperature (BT) instability. IEEE International Electron Devices Meeting Technical Digest, 1995. 1995, 871
• YAMAMOTO, T. Bias temperature instability in scaled p^+ polysilicon gate p-MOSFET. IEEE Trans. Electron Devices, 1999. 1999, 921

Terms in the title (4)： ゲート絶縁膜 ,  負バイアス温度不安定性 ,  回復 ,  現象