Art

J-GLOBAL ID：200902299927102916   Reference number：07A0926277

Integration of GaAs epitaxial layer to Si-based substrate using Ge condensation and low-temperature migration enhanced epitaxy techniques

Ge凝縮法と低温移動増速エピタクシー法を用いたSi系基板へのGaAsエピタキシャル層の組み入れ

Author (6)： OH Hoon Jung (Dep. of Electrical and Computer Engineering, National Univ. of Singapore, Singapore 119260, SGP) ,  CHOI Kyu Jin (Jusung Engineering, Kyunggi-Do 464-890, KOR) ,  LOH Wei Yip (Inst. of Microelectronics, Singapore 117685, SGP) ,  HTOO Thwin (Dep. of Electrical and Computer Engineering, National Univ. of Singapore, Singapore 119260, SGP) ,  CHUA Soo Jin (Dep. of Electrical and Computer Engineering, National Univ. of Singapore, Singapore 119260, SGP) ,  CHO Byung Jin (Dep. of Electrical and Computer Engineering, National Univ. of Singapore, Singapore 119260, SGP)
Material： Journal of Applied Physics  (Journal of General Physics and its Application to Other Sciences and to Industry)
Volume： 102  Issue： 5  Page： 054306  Publication year： Sep. 01, 2007 
JST Material Number： C0266A  ISSN： 0021-8979  CODEN： JAPIAU  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Thesaurus term： *gallium arsenide ,...
Semi thesaurus term： *SiGe-on-insulator structure

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JST classification (1)： Semiconductor thin films  (BK14040E)

Terms in the title (9)： Ge ,  凝縮 ,  低温 ,  増速 ,  エピタクシー ,  Si ,  GaAs ,  エピタキシャル層 ,  組み入れ