Research Project code：9800005876
Update date：Feb. 07, 2004
Crystal growth and lattice defect control of AgGaS2 compound semiconductor
1987 - 1997
Investigating Researcher (2)：
A direct transition type compound semiconductor AgGaS2 withthe chalcopyrite structure (band gap for A-valence band:2.73eV) is expected as to be one of the candidate materials fora blue emitting diode. The purpose of the present study is to grow high-quality large single crystals and to evaluate the lattice defects of the crystals by measuring photoluminescence and photoconductivity.
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