Proj
J-GLOBAL ID:200904004580356839  Research Project code:9800001670 Update date:Nov. 01, 2002

Liquid phase epitaxial growth of III-V compound semiconductors

III-V族化合物半導体の液相エピタキシヤル成長
Study period:1978 - 2001
Organization (1):
Investigating Researcher (2):
Research overview:
Liquid phase epitaxial techniques are developed to prepare homo and hetero-structures of III-V compound and alloy semiconductors, especially of GaN group. Specific applications include to photodiodes, light-emitting diodes, and laser diodes.
Keywords (7):
light emitting diode ,  photodiode ,  liquid phase growth ,  epitaxy ,  compound semiconductor ,  gallium compound ,  aluminum compound
Research program: Ordinary Research

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