J-GLOBAL ID:200904048754933560  Research Project code:9800001672 Update date:Dec. 10, 2003

Measurement techniques for semiconductor interface properties.

Study period:2001 - 2001
Organization (1):
Investigating Researcher (3):
Research overview:
Techniques for measurement of impurity profiles, minority carrier diffusion length and optical absorption coefficient in optoelectronic devices are developed using two frequency method. Studies on measuring method for deep levels and surface states at semiconductor junctions are also conducted.
Keywords (8):
semiconductor ,  impurity levels ,  optoelectronics ,  surface states ,  impurity distribution ,  semiconductor junction ,  carrier lifetime ,  photoelectric device
Research program: Ordinary Research

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