Proj
J-GLOBAL ID:200904068681832354  Research Project code:9800003628 Update date:Nov. 30, 1994

Deep levels in compound semiconductors

化合物半導体中の欠陥の制御と応用
Study period:1971 - 1993
Organization (1):
Investigating Researcher (1):
Research overview:
1) Deep levels in semi-insulating GaAs. 2) Defects in GaAs introduced by reactive ion etching, 3) Optical transitions of defects in GaAs measured by far-infrared absorption.
Keywords (6):
compound ,  gallium ,  RIE ,  lattice ,  far ,  optical
Research program: Ordinary Research
Research budget: 1993: \0

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