Proj
J-GLOBAL ID:200904089107296107  Research Project code:9800021180 Update date:Dec. 15, 2003

Basic research on thin film devices prepared by ion and plasma processing technology

イオン・プラズマによる薄膜デバイス化の基礎的研究
Study period:1993 - 1995
Organization (1):
Investigating Researcher (9):
Research overview:
In order to make an small, sensitive and precise electronic device, the damage free thin films and etching technology are essential factors. Ion and plasma processing technology are excellent for etching process, but some problems may occur for the damage free thin film fabrication. Thin film deposition, etching and device fabrication technology using low energy ion processing technology will be studied. This project includes 3 themes. 1) ITO thin film prepared by low energy ion assisted IBS. 2) Development of CMOS IC technology using ion process. 3) Development of Infrared sensor by Y-system high Tc superconductor thin films.
Keywords (10):
thin ,  ion ,  plasma ,  fine ,  CMOS ,  infrared ,  sensor ,  printed ,  silicon ,  damage
Research program: Ordinary Research
Research budget: 1995: \20,000,000

Return to Previous Page