J-GLOBAL ID:200904097241786865  Research Project code:0250006065 Update date:Oct. 28, 2004

Low temperature solution growth of silicon carbide crystals

Study period:1999 - 2005
Organization (1):
Investigating Researcher (1):
Research overview:
SiC is a valuable crystal for not only visible light emmision but also electric power control because of its wide bandgap property and stability. From the view point of device fabrication, two fundamental problems should be solved. The first is its very high growth temperature over than 1500 degree C. The second is the control of its poly types. To solve these problems, we developed a new solution growth technique, and succeeded in growing 3C-SiC layers at 950 degree C on 6H-SiC substrates.
Keywords (4):
silicon carbide ,  crystal growth ,  liquid phase epitaxy ,  low temperature growth
Project Organization (1):
  • (0256006000)
Research program: Ordinary Research
Ministry with control over the research :
Ministry of Education, Culture, Sports, Science and Technology

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