Proj
J-GLOBAL ID:200904099309518140  Research Project code:9800042391 Update date:Dec. 15, 2003

Low temperature formation of silicon oxynitride layers by use of plasma generated by low energy electron impact

低速電子衝撃により生成するプラズマを用いるシリコン酸窒化膜の低温形成
Study period:1996 - 1997
Organization (1):
Investigating Researcher (1):
Research overview:
Silicon oxynitride can avoid the diffusion of boron because of its dense structure, has good interfacial characteristics, and thus, its application to gate insulating layers in metal-oxide-semiconductor (MOS) devices is desired. In the present study, silicon oxynitride layers are formed at low temperatures below 700 centigrade by exposing silicon dioxide layers to plasma such as nitrogen plasma generated by low energy electron impact.
Keywords (5):
silicon ,  nitride ,  insulating ,  MOS ,  electron
Research program: Ordinary Research
Research budget: 1997: \1,000,000

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