J-GLOBAL ID:200909037258289895   JST material number (FULL):N19942925U   JST material number:N19942925

高集積密度半導体素子を利用した中性子照射損傷ダイナミクスの研究 平成4-5年度 No.04680229

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JST material number
Identifier of Material (journals)
Material type:Article, Print, zz
Publication frequency: zz
Country of issued:Japan(JPN)
Language (1): Japanese(JA)
Publisher: 文部省
Publication place:東京
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