Mat
J-GLOBAL ID：200909089147818554
JST material number (FULL)：S0273AAA
JST material number：S0273A
Technical Report of ISSP. Series A (Institute for Solid State Physics, University of Tokyo)
JST material number：
JST material number
Identifier of Material (journals)
S0273A
ISSN (1)：
0082-4798
CODEN (1)：
TISSB
Material type：Article, Print, ir
Publication frequency： ir
Country of issued：Japan(JPN)
Language (1)：
English(EN)
JST classification (3)：
電子物性、磁性、光物性 (BM)
, 物質の構造、放射線物理 (BK)
, 機械的性質と熱物性 (BL)
Publisher：
東京大学物性研究所
Publication place：柏
Conference name (6)：
- Structure Dependent Ultrafast Relaxation Time of Photo-Excited Carriers in SiC
- Study on Sublattice Reversal in a GaAs/Ge/GaAs(001) Crystal by X-ray Standing Waves
- Crystal Orientation of Silver Films on Silicon Surfaces Revealed by Surface X-ray Diffraction
- X-ray Diffraction Study of the Phase Transition of Si(111) Rute3 x Rute3-Ag Surface
- A Phase Retrieval Method for Noncrystalline Layers on Crystal Surfaces
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JST library information (0)
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