Rchr
J-GLOBAL ID:201001032312561105   Update date: Jun. 08, 2020

Shiojima Kenji

シオジマ ケンジ | Shiojima Kenji
Affiliation and department:
Job title: Professor
Research field  (1): Electronic devices and equipment
Research keywords  (1): semiconductor, electron devices, metal contacts
Papers (57):
  • Kenji Shiojima, Hitoshi Kambara, Tokiyoshi Matsuda, Takashi Shinohe. Mapping the interfacial reaction of α-Ga2O3 Schottky contacts through scanning internal photoemission microscopy. Thin Solid Films. 2019. 685. 17-25
  • Kenji Shiojima, Masataka Maeda, Tomoyoshi Mishima. Scanning internal photoemission microscopy measurements of n-GaN Schottky contacts under applying voltage. Japanese Journal of Applied Physics. 2019. 58. SCCD02-1-SCCD02-7
  • Kenji Shiojima, Takanori Hashizume, Masaru Sato, Mayumi B. Takeyama. Mapping of a Ni/SiNx/n-SiC structure using scanning internal photoemission microscopy. Japanese Journal of Applied Physics. 2019. 58. SBBC02-1-SBBC02-6
  • Shiojima, K., Suemitsu, T., Ozaki, T., Samukawa, S. Mapping of damage induced by neutral beam etching on GaN surfaces using scanning internal photoemission microscopy. Japanese Journal of Applied Physics. 2019. 58. SC. SCCD13-1-SCCD13-5
  • Kenji Shiojima, Yukiyasu Kashiwagi, Tasuku Shigemune, Atsushi Koizumi, Takanori Kojima, Masashi Saitoh, Takahiro Hasegawa, Masaya Chigane, Yasufumi Fujiwara. Effect of surface treatment of printed Ag Schottky contacts on n-GaN epitaxial layers using Ag nanoink: Two dimensional characterization by scanning internal photoemission microscopy. Japanese Journal of Applied Physics. 2018. 57. 07MA01-1-07MA01-5
more...
MISC (21):
Books (11):
  • Semiconductor Process Integration 11
    The Electrochemical Society 2019 ISBN:9781623325824
  • Thin Solid Films
    Elsevier 2014
  • 2014 GaNパワー/高周波デバイスの最新動向★徹底解説
    2014
  • Compound semiconductor technology outlook
    2013
  • Reliability and materials issues of III-V semiconductor optical and electron devices and materials II
    Cambridge university press 2012 ISBN:9781605114095
more...
Lectures and oral presentations  (157):
  • Two-dimensional characterization of etched GaN surfaces using scanning internal photoemission microscopy
    (2019)
  • Annealing of hole traps in hydrogen-ion-implanted n-GaN
    (2019)
  • Mapping of structural defects in SiC wafers using scanning internal photoemission microscopy
    (2019)
  • Mapping of N-polar p-type GaN Schottky contacts using scanning internal photoemission microscopy
    (2019)
  • Mapping of photo-electrochemical etched Ni/GaN Schottky contacts using scanning internal photoemission microscopy (II) -Comparison of n-type and p-type crystals--
    (2019)
more...
Education (1):
  • 1989 - 1992 Tokyo Metropolitan University
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