Rchr
J-GLOBAL ID:201001055012629271
Update date: Nov. 20, 2024
Fukuchi Atsushi
フクチ アツシ | Fukuchi Atsushi
Affiliation and department:
Job title:
Assistant professor
Research field (3):
Thin-film surfaces and interfaces
, Electronic devices and equipment
, Magnetism, superconductivity, and strongly correlated systems
Research theme for competitive and other funds (20):
- 2023 - 2026 化学結合力を利用した非平衡量子相転移の転移速度の巨大変調とその人工知能素子応用
- 2023 - 2025 非平衡強相関電子系を利用した時間的可変性を持つ脳型ハードウェ アの創出
- 2022 - 2024 Investigation on the Dynamic Transport Properties of Current-Induced Nonequilibrium Transitions in Strongly Correlated Materials and Their Applications to Emergent Neuromorphic Devices
- 2024 - 2024 非線形人工知能素子応用に向けた新規アモルファス金属酸化物の設計と開発
- 2023 - 2024 化学気相蒸着法による強相関電子系2次元物質の基盤的合成技術の確立と創発機能デバイスの創出
- 2023 - 2024 非平衡強相関電子系を利用した時間的可変性を持つ人工知能素子の創出
- 2021 - 2024 2 元系アモルファス酸化物における非線形伝導現象発生時のイオン移動解析
- 2022 - 2023 医用分光イメージングに向けたテラヘルツ用単電子トランジスタ検出器の研究
- 2020 - 2022 Study on single-electron-transistor-based terahertz detector for spectroscopic analysis of biomedical materials
- 2019 - 2022 抵抗変化酸化物の原子スケール表面観察を通した高精度人工シナプス材料の提案
- 2018 - 2021 ルテニウム酸化物における電場誘起電子相転移を利用した抵抗変化素子の開発
- 2018 - 2020 ナノ構造を用いた多機能ナノデバイス作成とその応用に関する研究
- 2016 - 2020 Study on high-frequency characteristics of single-electron devices for spectroscopy of biomaterials
- 2018 - 2019 電場誘起型の金属絶縁体転移を用いた強相関ニューロモルフィック素子の開発
- 2018 - 2019 Enhanced defect formation at metal/oxide interfaces and its application to resistive memory devices
- 2016 - 2019 Scientific Research (B)
- 2016 - 2019 電場誘起型モット転移を用いた純電子的抵抗変化メモリの創製
- 2016 - 2017 Study on high-frequency characteristics of single-electron devices for spectroscopy of biomaterials
- 2015 - 2016 抵抗変化メモリ応用に向けたナノ構造下における電場誘起型モット転移物質の物性探索
- 2015 - 2016 純電子的抵抗変化メモリの実現に向けた電場誘起モット転移物質のナノ構造化に関する研究
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Papers (44):
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Atsushi Fukuchi, Takayoshi Katase, Toshio Kamiya. Room-Temperature Possible Current-Induced Transition in Ca2RuO4 Thin Films Grown Through Intercalation-Like Cation Diffusion in the A2BO4 Ruddlesden-Popper Structure. Small Methods. 2024
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Atsushi Tsurumaki-Fukuchi, Takayoshi Katase, Toshio Kamiya. Thickness-dependent intergrowth of Ruddlesden-Popper impurity structures in solid-phase epitaxial growth of Ca2RuO4 thin films. Journal of the Ceramic Society of Japan. 2024
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Takayuki Gyakushi, Ikuma Amano, Ryota Tanizawa, Atsushi Tsurumaki-Fukuchi, Masashi Arita, Yasuo Takahashi. Characteristics of the single-electron conduction properties of randomly distributed metal nanodot arrays. Japanese Journal of Applied Physics. 2024
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Keiji Tsubaki, Masashi Arita, Takayoshi Katase, Toshio Kamiya, Atsushi Tsurumaki-Fukuchi, Yasuo Takahashi. Significant effects of epitaxial strain on the nonlinear transport properties in Ca2RuO4 thin films with the current-driven transition. Japanese Journal of Applied Physics. 2023
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Keiji Tsubaki, Atsushi Tsurumaki-Fukuchi, Takayoshi Katase, Toshio Kamiya, Masashi Arita, Yasuo Takahashi. Dynamics of an Electrically Driven Phase Transition in Ca2RuO4 Thin Films: Nonequilibrium High-Speed Resistive Switching in the Absence of an Abrupt Thermal Transition. Advanced Electronic Materials. 2023. 9. 6. 2201303
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MISC (49):
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Takayuki Gyakushi, Ikuma Amano, Atsushi Tsurumaki-Fukuchi, Masashi Arita, Yasuo Takahashi. Coulomb Blockade Oscillations Oberved in Micrometer-sized Single-Electron Device of Metal Nanodot Array. Proceedings of the 2022 IEEE Silicon Nanoelectronics Workshop (SNW). 2022
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T. Gyakushi, Y. Asai, B. Byun, I. Amano, A. Tsurumaki-Fukuchi, M. Arita, Y. Takahashi. Non-Uniform Gate-Capacitance Distribution in Fe Nanodot Array Based Double-Gate Single-Electron Devices Due to Geometrical Structure of the Dots. Extended Abstract of the 2021 International Conference on Solid State Devices and Materials (SSDM2021). 2021
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K. Tsubaki, A. Tsurumaki-Fukuchi, Y. Takahashi, T. Katase, T. Kamiya, M. Arita. Fast and Reliable Resistance Switching in Ca2RuO4 Thin Films Driven by the Current-Induced Phase Transition. Extended Abstract of the 2021 International Conference on Solid State Devices and Materials (SSDM2021). 2021
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Takayuki Gyakushi, Yuki Asai, Beommo Byun, Ikuma Amano, Atsushi Tsurumaki-Fukuchi, Masashi Arita, Yasuo Takahashi. Fabrication and Evaluation of Single-Electron Devices Formed by Single-Layered Fe Nanodot Array. IEICE Technical Report. 2021. 121. 44. 23-26
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高橋庸夫, 寒川誠二, 有田正志, 大野武雄, 福地厚, 遠藤和彦, 李遠霖, 瘧師貴幸. Research of Application of Highly Functional Nano Devices Fabricated by Using Nanostructures. 東北大学流体科学研究所共同利用・共同研究拠点流体科学国際研究教育拠点活動報告書. 2021. 2019 (CD-ROM)
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Patents (2):
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不揮発性メモリ素子とその製造方法
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抵抗変化型不揮発性メモリ素子
Books (1):
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Memristor and Memristive Neural Networks
In Tech, Rijeka 2018
Lectures and oral presentations (251):
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Room-Temperature Current-Induced Transition in Ca2RuO4 Thin Films Grown Based on Interstitial Cation Diffusion in the Ruddlesden-Popper Structure
(The 71st JSAP Spring Meeting 2024)
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原子平坦アモルファス TaOx薄膜を用いた電子シナプス素子動作原理の直接観察
(日本表面真空学会東北・北海道支部令和5年度学術講演会 2024)
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Nonthermal Mott Resistive Switching in Ca2RuO4 Thin Films with Independence from the Temperature-Driven Transition Characteristics
(Advanced Materials Research GRAND MEETING MRM2023/IUMRS-ICA2023 2023)
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Observation of Intercalation-Like Cation Diffusion in Ca2RuO4 Thin Films with a Ruddlesden-Popper Structure and Its Impacts on the Current-Induced Metal-Insulator Transition
(The 43rd Electronics Division Meeting of the Ceramic Society of Japan 2023)
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Effects of Epitaxial Strain on Nonlinear Transport Properties in Ca2RuO4 Thin Films with a Current-Driven Metal-Insulator Transition
(The 84th JSAP Autumn Meeting 2023)
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Education (3):
- 2007 - 2010 the University of Tokyo Graduate School of Frontier Sciences (doctor's course)
- 2005 - 2007 the University of Tokyo Graduate School of Frontier Sciences (master's course)
- 2001 - 2005 Tokyo Institute of Technology School of Engineering
Professional career (1):
- Ph.D. (The University of Tokyo)
Work history (2):
- 2014/10 - 現在 Hokkaido University Graduate School of Information Science and Technology Assistant Professor
- 2010/04 - 2014/09 National Institute of Advanced Industrial Science and Technology (AIST) Electronics and Photonics Research Institute (ESPRIT) Postdoctoral Researcher
Awards (5):
- 2023/12 - Organizing Committee of MRM2023 The MRM Poster Award 2023 (Gold Award)
- 2023/11 - The Ceramic Society of Japan, Electronics Division Presentation Award, Electronics Division Meeting of the Ceramic Society of Japan
- 2021/07 - Tokyo Institute of Technology MSL Award for Research (for Young Scientists)
- 2013/03 - The Japan Society of Applied Physics JSAP's Young Scientist Oral Presentation Award
- 2009/12 - Physical Review B, Editors' Suggestion
Association Membership(s) (4):
Materials Research Society
, The Japan Society of Applied Physics
, The Physical Society of Japan
, The Japan Society of Vacuum and Surface Science
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