Yatabe Zenji

ヤタベゼンジ | Yatabe Zenji

Affiliation and department：
Job title： Associate Professor
Homepage URL (1)： https://researchmap.jp/zenji.yatabe/link

Research field (4)： Thin-film surfaces and interfaces , Electronic devices and equipment , Semiconductors, optical and atomic physics , Bio-, chemical, and soft-matter physics

Research keywords (4)： Compound semiconductors , Surfaces and interfaces , Mist-CVD , Fluctuations

Research theme for competitive and other funds (12)：

2023 - 2026 Gate insulator deposition process for GaN-based MOS devices using mist-CVD technique
2023 - 2026 Study on high-κ dielectric/regrown nitride semiconductor interfaces for high efficiency and highly-safe transistors
2024 - 2025 研究機器・設備整備
2019 - 2022 Integral transformation method to investigate flow characteristics of polymer solution from the phase transition perspective
2019 - 2022 Surface passivation and insulated gate structures for nitride-based semiconductor devices using mist-CVD method

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Papers (44)：

Keigo Bito, Masaki Ishiguro, Hadirah A. Radzuan, Hikaru Hiroshige, Tomohiro Motoyama, Yusui Nakamura, Joel T. Asubar, Zenji Yatabe. Interface state density in mist chemical vapor deposited Al₂O₃/AlGaN/GaN structure. Japanese Journal of Applied Physics. 2024. 63. 8. 080905-1-4
Ali Baratov, Shinsaku Kawabata, Shun Urano, Itsuki Nagase, Masaki Ishiguro, Shogo Maeda, Takahiro Igarashi, Toi Nezu, Zenji Yatabe, Maciej Matys, et al. Evidence of reduced interface states in Al₂O₃/AlGaN MIS structures via insertion of ex-situ regrown AlGaN layer. Applied Physics Express. 2022. 15. 10. 104002-1-5
Zenji Yatabe, Joel T. Asubar. Ornstein-Uhlenbeck process in a human body weight fluctuation. Physica A: Statistical Mechanics and its Applications. 2021. 582. 126286-1-6
Joel T. Asubar, Zenji Yatabe, Dagmar Gregusova, Tamotsu Hashizume. Controlling surface/interface states in GaN-based transistors: Surface model, insulated gate, and surface passivation. Journal of Applied Physics. 2021. 129. 12. 121102-1-28
Rui Shan Low, Joel T. Asubar, Ali Baratov, Shunsuke Kamiya, Itsuki Nagase, Shun Urano, Shinsaku Kawabata, Hirokuni Tokuda, Masaaki Kuzuhara, Yusui Nakamura, et al. GaN-based MIS-HEMTs with Al₂O₃ dielectric deposited by low-cost and environmental-friendly mist-CVD technique. Applied Physics Express. 2021. 14. 3. 031004-1-5

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MISC (32)：

Zenji Yatabe, Hadirah Radzuan, Keigo Bito, Masaya Fukumitsu, Ryota Ochi, Taketomo Sato. Insulated gate structures for GaN-based devices using mist-CVD method. The Papers of Technical Meeting on "Electron Devices", IEE Japan. 2024. EDD-24-032. 13-17
Zenji Yatabe, Yusui Nakamura, Joel T. Asubar. Mist chemical vapor deposited-gate insulators for GaN-based MIS devices applications. 2022 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK). 2022. 1-3
Tomohiro Motoyama, Zenji Yatabe, Yusui Nakamura, Ali Baratov, Rui Shan Low, Shun Urano, Joel T. Asubar, Masaaki Kuzuhara. Mist chemical vapor deposited-Al₂O₃/AlGaN interfacial characterization for GaN MIS-HEMTs. 2021 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK). 2021. 1-2
M. Ishiguro, S. Urano, R. S. Low, M. Faris, I. Nagase, A. Baratov, J. T. Asubar, T. Motoyama, Y. Nakamura, Z. Yatabe, et al. Recessed gate GaN-based MIS-HEMTs with Al₂O₃ gate dielectric deposited by mist-CVD method. 2021 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK). 2021. 1-2
S. Urano, R. S. Low, M. Faris, M. Ishiguro, I. Nagase, A. Baratov, J. T. Asubar, T. Motoyama, Y. Nakamura, Z. Yatabe, et al. Electrical properties of GaN-based MIS-HEMTs with Al₂O₃ gate insulator deposited by ALD and mist-CVD techniques. 2021 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK). 2021. 1-2

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Patents (1)：

積層構造体及び発光ダイオード

Books (1)：

半導体・磁性体・電池の固/固界面制御と接合・積層技術
S&T出版 2024 ISBN:9784911146040

Lectures and oral presentations (220)：

GaN-based MIS devices with mist chemical vapor deposited gate insulator
(2024)
Mist etching of AlGaN barrier layer for normally-off operation
(SMDF 2024 2024)
Extraction of Charge Relaxation Time Distribution of 1/f Noise Based on Inverse Integral Transformation Method
(The 85th JSAP Autumn Meeting 2024)
Mist Chemical Vapor Deposited Alloy Gate Dielectric for Potential Applications in GaN Based MIS Devices
(The 85th JSAP Autumn Meeting 2024)
Low-state-density Al2O3/n-GaN interfaces using mist chemical vapor deposited Al2O3 gate insulator
(15th Topical Workshop on Heterostructure Microelectronics (TWHM 2024) 2024)

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Education (4)：

2005 - 2008 Tokyo University of Agriculture and Technology United Graduate School of Agricultural Science Department of Biochemistry and Biotechnology
2005 - 2006 École normale supérieure de Cachan (ENS Cachan) Laboratoire de Photophysique et Photochime Supramoléculaires et Macromoléculaire (PPSM)
2003 - 2005 Tokyo University of Agriculture and Technology Graduate School of Agriculture Department of Natural Resources and Materials
1999 - 2003 Tokyo University of Agriculture and Technology Faculty of Agriculture Department of Environmental and Natural Resource Science

Professional career (3)：

Ph.D. in Biochemistry and Biotechnology (Tokyo University of Agriculture and Technology)
Master of Agriculture (Tokyo University of Agriculture and Technology)
Bachelor of Agriculture (Tokyo University of Agriculture and Technology)

Work history (6)：

2023 - 現在 Kumamoto University Research and Education Institute for Semiconductors and Informatics Associate Professor
2020 - 2023 Kumamoto University Division of Informatics and Energy, Faculty of Advanced Science and Technology (FAST) Associate Professor
2015 - 2020 Kumamoto University Priority Organization for Innovation and Excellence (POIE) Assistant Professor
2015 - 2015 Hokkaido University Research Center for Integrated Quantum Electronics (RCIQE) Specially Appointed Assistant Professor
2011 - 2015 Hokkaido University Research Center for Integrated Quantum Electronics (RCIQE) Postdoctoral Fellow

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Committee career (9)：

2024 - 現在 The Japan Society of Applied Physics (JSAP) Program Committee member (Compound and power devices, process technology and characterization)
2023 - 現在電気学会電子・情報・システム部門(C部門) 電子デバイス技術委員会化合物半導体を用いた次世代高機能デバイス技術とアプリケーション調査専門委員会委員
2020 - 現在 National Institute of Science and Technology Policy (NISTEP) The S&T Experts Network Investigator
2023 - 2023 The Japan Society of Applied Physics Local Steering Committee, The 84th JSAP Autumn Meeting 2023
2022 - 2022 第13回半導体材料・デバイスフォーラム実行委員

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Awards (1)：

2016/09 - The Japan Society of Applied Physics 38th JSAP Paper Award Characterization of electronic states at insulator/(Al)GaN interfaces for improved insulated gate and surface passivation structures of GaN-based transistors

Association Membership(s) (1)：

The Japan Society of Applied Physics

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