Temperature dependence of threshold current for quantum-well Al<sub>x</sub>Ga<sub>1-x</sub>As-GaAs heterostructure laser diodes.

CHIN R; HOLONYAK N Jr; VOJAK B A; HESS K; DUPUIS R D; DAPKUS P D

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J-GLOBAL ID：201002024926942025 Reference number：80A0205276

Temperature dependence of threshold current for quantum-well Al_xGa_1-xAs-GaAs heterostructure laser diodes.

量子井戸形Al_xGa_1-xAs-GaAsヘテロ構造半導体レーザの電流しきい値の温度依存性

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Material：
Volume： 36 Issue： 1 Page： 19-21 Publication year： 1980
JST Material Number： H0613A ISSN： 0003-6951 CODEN： APPLA Document type： Article
Article type：短報 Country of issue： United States (USA) Language： ENGLISH (EN)

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Temperature dependence of threshold current for quantum-well AlxGa1-xAs-GaAs heterostructure laser diodes.

Temperature dependence of threshold current for quantum-well Al_xGa_1-xAs-GaAs heterostructure laser diodes.