Art
J-GLOBAL ID:201002034675520989   Reference number:75A0096001

A hydrogen-sensitive MOS field-effect transistor.

水素敏感MOS電場効果トランジスタ
Author (4):
Material:
Volume: 26  Issue:Page: 55-57  Publication year: 1975 
JST Material Number: H0613A  ISSN: 0003-6951  CODEN: APPLA  Document type: Article
Article type: 短報  Country of issue: United States (USA)  Language: ENGLISH (EN)
Thesaurus term:
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
,...
   To see more with JDream III (charged).   {{ this.onShowAbsJLink("http://jdream3.com/lp/jglobal/index.html?docNo=75A0096001&from=J-GLOBAL&jstjournalNo=H0613A") }}
Terms in the title (3):
Terms in the title
Keywords automatically extracted from the title.

Return to Previous Page