Art
J-GLOBAL ID：201002034675520989   Reference number：75A0096001

A hydrogen-sensitive MOS field-effect transistor.

水素敏感MOS電場効果トランジスタ
Author (4)：
LUNDSTROEM I

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, 
SHIVARAMAN S

About SHIVARAMAN S

, 
SVENSSON C

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, 
LUNDKVIST L

About LUNDKVIST L


Material：
Appl Phys Lett  (Applied Physics Letters)

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Volume： 26  Issue： 2  Page： 55-57  Publication year： 1975 
JST Material Number： H0613A  ISSN： 0003-6951  CODEN： APPLA  Document type： Article
Article type： 短報  Country of issue： United States (USA)  Language： ENGLISH (EN)
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MOSFET

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,...
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Terms in the title (3)：
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水素

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, 
MOS

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, 
電場効果トランジスタ

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