Art
J-GLOBAL ID：201002049887204219   Reference number：77A0301887

Reversible conductivity changes in discharge-produced amorphous Si.

放電によって作られた非晶質Si中の可逆的な伝導率の変化
Author (2)：
STAEBLER D L

About STAEBLER D L

, 
WRONSKI C R

About WRONSKI C R


Material：
Appl Phys Lett  (Applied Physics Letters)

About Appl Phys Lett


Volume： 31  Issue： 4  Page： 292-294  Publication year： 1977 
JST Material Number： H0613A  ISSN： 0003-6951  CODEN： APPLA  Document type： Article
Article type： 短報  Country of issue： United States (USA)  Language： ENGLISH (EN)
Thesaurus term：
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
無定形

About 無定形

,...
   To see more with JDream III (charged).   {{ this.onShowAbsJLink("http://jdream3.com/lp/jglobal/index.html?docNo=77A0301887&from=J-GLOBAL&jstjournalNo=H0613A") }}
Terms in the title (3)：
Terms in the title
Keywords automatically extracted from the title.
放電

About 放電

, 
非晶質Si

About 非晶質Si

, 
伝導率

About 伝導率


Return to Previous Page

TOP

BOTTOM