Room-temperature operation of GaInAsP/InP doubleheterostructure diode lasers emitting at 1.1 μm.

HSIEH J J

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J-GLOBAL ID：201002052089656845 Reference number：76A0119037

Room-temperature operation of GaInAsP/InP doubleheterostructure diode lasers emitting at 1.1 μm.

1.1μmで放射するGaInAsP/InP二重ヘテロ構造ダイオード・レーザの室温動作

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Volume： 28 Issue： 5 Page： 283-285 Publication year： 1976
JST Material Number： H0613A ISSN： 0003-6951 CODEN： APPLA Document type： Article
Article type：短報 Country of issue： United States (USA) Language： ENGLISH (EN)

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