Phosphorus diffusion into silicon under the condition of controlled surface concentration.

MATSUMOTO S; NIIMI T

Art

J-GLOBAL ID：201002064879617791 Reference number：77A0164262

Phosphorus diffusion into silicon under the condition of controlled surface concentration.

表面濃度制御条件下でのシリコン中へのりんの拡散

Publisher site Copy service {{ this.onShowCLink("http://jdream3.com/copy/?sid=JGLOBAL&noSystem=1&documentNoArray=77A0164262&COPY=1") }}
Access JDreamⅢ for advanced search and analysis. {{ this.onShowJLink("http://jdream3.com/lp/jglobal/index.html?docNo=77A0164262&from=J-GLOBAL&jstjournalNo=G0520A") }}

Author (2)： ,
Material：
Volume： 15 Issue： 11 Page： 2077-2082 Publication year： 1976
JST Material Number： G0520A CODEN： JJAPA Document type： Article
Article type：原著論文 Country of issue： Japan (JPN) Language： ENGLISH (EN)

,...

To see more with JDream III (charged). {{ this.onShowAbsJLink("http://jdream3.com/lp/jglobal/index.html?docNo=77A0164262&from=J-GLOBAL&jstjournalNo=G0520A") }}

, , ,

Return to Previous Page