Art

J-GLOBAL ID：201002208471545808   Reference number：10A0325948

Strain of GaAs/GaAsP Superlattices Used as Spin-Polarized Electron Photocathodes, Determined by X-Ray Diffraction

GaAs/GaAsP超格子のX線回折により決定した歪

Author (24)： SAKA Takashi (Dep. of Electrical and Electronic Engineering, School of Engineering, Daido Univ., JPN) ,  ISHIDA Yoichi (Dep. of Electrical and Electronic Engineering, School of Engineering, Daido Univ., JPN) ,  KANDA Masataka (Dep. of Electrical and Electronic Engineering, School of Engineering, Daido Univ., JPN) ,  JIN Xiuguang (Dep. of Crystalline Materials Sci., Graduate School of Engineering, Nagoya Univ., JPN) ,  MAEDA Yuya (Dep. of Crystalline Materials Sci., Graduate School of Engineering, Nagoya Univ., JPN) ,  FUCHI Shingo (Dep. of Crystalline Materials Sci., Graduate School of Engineering, Nagoya Univ., JPN) ,  UJIHARA Toru (Dep. of Crystalline Materials Sci., Graduate School of Engineering, Nagoya Univ., JPN) ,  TAKEDA Yoshikazu (Dep. of Crystalline Materials Sci., Graduate School of Engineering, Nagoya Univ., JPN) ,  MATSUYAMA Tetsuya (Dep. of Physics and Electronics, Graduate School of Engineering, Osaka Prefecture Univ., JPN) ,  HORINAKA Hiromichi (Dep. of Physics and Electronics, Graduate School of Engineering, Osaka Prefecture Univ., JPN) ,  KATO Toshihiro (New Business Dev. Div., Daido Steel Co., Ltd., JPN) ,  YAMAMOTO Naoto (Graduate School of Engineering, Nagoya Univ., JPN) ,  MANO Atsushi (Dep. of Physics, Graduate School of Sci., Nagoya Univ., JPN) ,  NAKAGAWA Yasuhide (Dep. of Physics, Graduate School of Sci., Nagoya Univ., JPN) ,  KUWAHARA Makoto (Dep. of Physics, Graduate School of Sci., Nagoya Univ., JPN) ,  OKUMI Shoji (Dep. of Physics, Graduate School of Sci., Nagoya Univ., JPN) ,  NAKANISHI Tsutomu (Dep. of Physics, Graduate School of Sci., Nagoya Univ., JPN) ,  YAMAMOTO Masahiro (High Energy Accelerator Organization, JPN) ,  OHSHIMA Takashi (Central Res. Lab., Hitachi Ltd., JPN) ,  KOHASHI Teruo (Central Res. Lab., Hitachi Ltd., JPN) ,  SUZUKI Masahiko (Fundamental Electronics Res. Inst., Osaka Electro-Communication Univ., JPN) ,  HASHIMOTO Michihiro (Fundamental Electronics Res. Inst., Osaka Electro-Communication Univ., JPN) ,  YASUE Tsuneo (Fundamental Electronics Res. Inst., Osaka Electro-Communication Univ., JPN) ,  KOSHIKAWA Takanori (Fundamental Electronics Res. Inst., Osaka Electro-Communication Univ., JPN)
Material： e-Journal of Surface Science and Nanotechnology (Web)  (表面科学とナノテクノロジー)
Volume： 8  Page： 125-130 (J-STAGE)  Publication year： 2010 
JST Material Number： U0016A  ISSN： 1348-0391  Document type： Article
Article type： 原著論文  Country of issue： Japan (JPN)  Language： ENGLISH (EN)

Thesaurus term： spin polarization ,  *superlattice ,  *photoelectric cathode ,  *gallium arsenide ,  *phosphorus compound ,  *X-ray diffraction ,  *strain ,  crystal growth ,  quantum well ,  overlayer ,  thickness of strata ,  band structure ,  transmission electron microscope ,  photoluminescence ,  phosphorus ,  content(quantity) ,  dependence ,  linearity ,  lattice defect ,  depolarization(physiology)
Semi thesaurus term： *photocathode ,  barrier layer

JST classification (4)： Salts  (CD01050V) ,  Crystal structure of other inorganic compounds  (BK07030J) ,  X-ray diffraction methods  (BK01020I) ,  Electrochemical reaction  (CB07050F)

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Terms in the title (5)： GaAs ,  GaAsP ,  超格子 ,  X線回折 ,  歪