Art

J-GLOBAL ID：201002209553600706   Reference number：10A0253072

Highly polarized Raman scattering anisotropy in single GaN nanowires

単一GaNナノワイヤの高度に偏光したRaman散乱異方性

Author (7)： SCHAEFER-NOLTE E. O. (Inst. of Bio- and Nanosystems (IBN-1), Res. Centre Juelich GmbH and JARA-FIT (Fundamentals of Future Information ...) ,  STOICA T. (Inst. of Bio- and Nanosystems (IBN-1), Res. Centre Juelich GmbH and JARA-FIT (Fundamentals of Future Information ...) ,  GOTSCHKE T. (Inst. of Bio- and Nanosystems (IBN-1), Res. Centre Juelich GmbH and JARA-FIT (Fundamentals of Future Information ...) ,  LIMBACH F. (Inst. of Bio- and Nanosystems (IBN-1), Res. Centre Juelich GmbH and JARA-FIT (Fundamentals of Future Information ...) ,  SUTTER E. (Center for Functional Nanomaterials, Brookhaven National Lab., Upton, New York 11973, USA) ,  SUTTER P. (Center for Functional Nanomaterials, Brookhaven National Lab., Upton, New York 11973, USA) ,  CALARCO R. (Inst. of Bio- and Nanosystems (IBN-1), Res. Centre Juelich GmbH and JARA-FIT (Fundamentals of Future Information ...)
Material： Applied Physics Letters  (Appl Phys Lett)
Volume： 96  Issue： 9  Page： 091907  Publication year： Mar. 01, 2010 
JST Material Number： H0613A  ISSN： 0003-6951  CODEN： APPLAB  Document type： Article
Article type： 短報  Country of issue： United States (USA)  Language： ENGLISH (EN)

Thesaurus term： *gallium nitride ,  semiconductor material ,  compound semiconductor ,  *nanowire ,  polarized light ,  *Raman scattering ,  anisotropy ,  Raman spectroscopy ,  wurtzite type crystal ,  laser beam ,  size effect ,  Wurtzite structure

JST classification (1)： Infrared and Raman spectra of inorganic molecules  (BH06032B)

Terms in the title (5)： GaN ,  ナノワイヤ ,  偏光 ,  Raman散乱 ,  異方性