Art

J-GLOBAL ID：201002211061616008   Reference number：10A0612206

A De-Embedding Method Using Different-Length Transmission Lines for mm-Wave CMOS Device Modeling

ミリ波CMOSデバイスモデリングに対する異なった長さの伝送線路を用いたディ-エンベッディング法

Author (7)： TAKAYAMA Naoki (Tokyo Inst. of Technol., Tokyo, JPN) ,  MATSUSHITA Kota (Tokyo Inst. of Technol., Tokyo, JPN) ,  ITO Shogo (Tokyo Inst. of Technol., Tokyo, JPN) ,  LI Ning (Tokyo Inst. of Technol., Tokyo, JPN) ,  BUNSEN Keigo (Tokyo Inst. of Technol., Tokyo, JPN) ,  OKADA Kenichi (Tokyo Inst. of Technol., Tokyo, JPN) ,  MATSUZAWA Akira (Tokyo Inst. of Technol., Tokyo, JPN)
Material： IEICE Transactions on Electronics (Institute of Electronics, Information and Communication Engineers)  (IEICE Trans Electron (Inst Electron Inf Commun Eng))
Volume： E93-C  Issue： 6  Page： 812-819  Publication year： Jun. 01, 2010 
JST Material Number： L1370A  ISSN： 0916-8524  Document type： Article
Article type： 原著論文  Country of issue： Japan (JPN)  Language： ENGLISH (EN)

Thesaurus term： *EHF wave ,  modeling ,  *transmission line ,  frequency (Hz) ,  micro circuit technique ,  S-matrix ,  transistor ,  condenser (capacitor) ,  inductor ,  characteristic impedance ,  error (measure) ,  *complementary metal oxide semiconductor ,  S parameter
Semi thesaurus term： on chip ,  millimeter wave ,  parasitic element

JST classification (2)： Transmission lines  (NC04030C) ,  Semiconductor integrated circuit  (NC03162T)

Reference (13)：

• [1] A. Parsa and B. Razavi, “A 60GHz CMOS receiver using a 30GHz LO,” IEEE International Solid-State Circuits Conference Digest of Technical Papers, pp.190-191.606, Feb. 2008.
• [2] J.F. Buckwalter and J. Kim, “A 26dB-gain 100GHz Si/SiGe cascaded constructive-wave amplifier,” IEEE International Solid-State Circuits Conference Digest of Technical Papers, pp.488-489, Feb. 2009.
• [3] Y. Hamada, M. Tanomura, M. Ito, and K. Maruhashi, “A high gain 77GHz power amplifier operating at 0.7V based on 90nm CMOS technology,” IEEE Microwave and Wireless Components Letters, vol.19, no.5, pp.329-331, May 2009.
• [4] P.J.V. Wijnen, H.R. Claessen, and E.A. Wolsheimer, “A new straightforward calibration and correction procedure for “on-wafer” high frequency s-parameter measurements (45MHz-18GHz),” Proc. Bipolar/BiCMOS Circuits and Technology Meeting, pp.70-73, Sept. 1987.
• [5] L.F. Tiemeijer, R.J. Havens, A.B.M. Jansman, and Y. Bouttement, “Comparison of the “pad-open-short” and “open-short-load” deembedding techniques for accurate on-wafer RF characterization of high-quality passives,” IEEE Trans. Microw. Theory Tech., vol.53, no.2, pp.723-729, Feb. 2005.

Terms in the title (4)： ミリ波 ,  CMOS ,  モデリング ,  伝送線路