Art

J-GLOBAL ID：201002237914471284   Reference number：10A0626972

Low temperature growth and properties of Cu-In-Te based thin films for narrow bandgap solar cells

ナローバンドギャップ太陽電池のためのCu-In-Teベース薄膜の低温成長および特性

Author (2)： MISE Takahiro (Dep. of Electrical Engineering and Electronics, Aoyama Gakuin Univ., 5-10-1 Fuchinobe, Sagamihara, Kanagawa ...) ,  NAKADA Tokio (Dep. of Electrical Engineering and Electronics, Aoyama Gakuin Univ., 5-10-1 Fuchinobe, Sagamihara, Kanagawa ...)
Material： Thin Solid Films
Volume： 518  Issue： 19  Page： 5604-5609  Publication year： Jul. 30, 2010 
JST Material Number： B0899A  ISSN： 0040-6090  Document type： Article
Article type： 原著論文  Country of issue： Netherlands (NLD)  Language： ENGLISH (EN)

Thesaurus term： compound semiconductor ,  copper compound ,  indium compound ,  telluride(chalcogenide) ,  semiconductor thin film ,  *MBE growth ,  scanning electron microscope ,  X-ray diffraction ,  electron microscopy ,  Raman spectrum ,  *optical gap ,  infrared absorption spectrum ,  electrical resistivity ,  temperature dependence ,  chalcopyrite type crystal ,  carrier density ,  X-ray photoelectron spectrum ,  Mott transition
Semi thesaurus term： *テルル化インジウム銅 ,  variable range hopping ,  *incident photon-to-current conversion efficiency ,  low temperature growth ,  *film solar cell

JST classification (4)： Semiconductor thin films  (BK14040E) ,  Electric conduction in crystalline semiconductors  (BM03043X) ,  Optical properties of condensed matter in general  (BM08010A) ,  Solar cell  (NC03084O)

Terms in the title (5)： 太陽電池 ,  Cu ,  Te ,  薄膜 ,  低温成長