Art

J-GLOBAL ID：201002246606818582   Reference number：10A1376511

Robust Hole Transport in a Thienothiophene Derivative toward Low-cost Electronics

低コストエレクトロニクスに向けたチエノチオフェン誘導体におけるロバストな正孔輸送

Author (8)： OKU Shinya (Graduate School of Life Sci. and Systems Engineering, Kyushu Inst. of Technol.) ,  TAKAMIYA Kazuhiro (Graduate School of Life Sci. and Systems Engineering, Kyushu Inst. of Technol.) ,  ADACHI Daisuke (Graduate School of Life Sci. and Systems Engineering, Kyushu Inst. of Technol.) ,  ISHIKAWA Shuhei (Graduate School of Life Sci. and Systems Engineering, Kyushu Inst. of Technol.) ,  NAGAMATSU Shuichi (Dep. of Computer Sci. and Electronics, Kyushu Inst. of Technol.) ,  TAKASHIMA Wataru (Res. Center for Advanced Eco-fitting Technol., Kyushu Inst. of Technol.) ,  HAYASE Shuzi (Graduate School of Life Sci. and Systems Engineering, Kyushu Inst. of Technol.) ,  KANETO Keiichi (Graduate School of Life Sci. and Systems Engineering, Kyushu Inst. of Technol.)
Material： Chemistry Letters  (Chem Lett)
Volume： 39  Issue： 12  Page： 1315-1316 (J-STAGE)  Publication year： 2010 
JST Material Number： S0742A  ISSN： 0366-7022  CODEN： CMLTAG  Document type： Article
Article type： 短報  Country of issue： Japan (JPN)  Language： ENGLISH (EN)

Thesaurus term： Electronics ,  *sulfur heterocyclic compound ,  *transport phenomenon ,  robustness ,  organic semiconductor ,  P-type semiconductor ,  chemical synthesis ,  silicon dioxide ,  silicon ,  cost ,  Suzuki reaction ,  hydrophobic ,  silane coupling agent ,  HOMO ,  LUMO ,  carrier injection ,  carrier mobility ,  surface roughness ,  atomic force microscope ,  *thin film transistor ,  ionization potential ,  *Thiophenes ,  hole injection ,  *hole transport ,  low cost
Semi thesaurus term： Suzuki-Miyaura coupling reactions ,  electronic technology ,  circuit material ,  low cost ,  *organic thin-film transistor

JST classification (2)： Thiophenes  (CF07074D) ,  Transistors  (NC03070N)

Substance index (1)： 2,5-Bis(5-hexyl-2-thienyl)thieno[3,2-b]thiophene

Reference (11)：

• 1) a) Y. Kim, S. Cook, S. M. Tuladhar, S. A. Choulis, J. Nelson, J. R. Durrant, D. D. C. Bradley, M. Giles, I. McCulloch, C.-S. Ha, M. Ree, Nat. Mater. 2006, 5, 197.
•  b) E. Cantatore, T. C. T. Geuns, G. H. Gelinck, E. van Veenendaal, A. F. A. Gruijthuijsen, L. Schrijnemakers, S. Drews, D. M. de Leeuw, IEEE J. Solid-State Circuits 2007, 42, 84.
•  c) V. Subramanian, J. M. J. Fréchet, P. C. Chang, D. C. Huang, J. B. Lee, S. E. Molesa, A. R. Murphy, D. R. Redinger, S. K. Volkman, Proc. IEEE 2005, 93, 1330.
• 2) a) C. D. Dimitrakopoulos, P. R. L. Malenfant, Adv. Mater. 2002, 14, 99.
•  b) H. Yang, T. J. Shin, M.-M. Ling, K. Cho, C. Y. Ryu, Z. Bao, J. Am. Chem. Soc. 2005, 127, 11542.

Terms in the title (4)： エレクトロニクス ,  チエノチオフェン誘導体 ,  ロバスト ,  正孔輸送