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J-GLOBAL ID:201002252633731111   Reference number:10A0465839

液体ガリウムを用いた多層グラフェンの形成とその電気特性

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Volume: 57th  Page: ROMBUNNO.19A-TE-7  Publication year: Mar. 03, 2010 
JST Material Number: Y0054B  Document type: Proceedings
Article type: 短報  Country of issue: Japan (JPN)  Language: JAPANESE (JA)
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Semiconductor thin films  ,  Transistors 
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