Tetsuya Katagiri, Tokiyoshi Matsuda, Hidenori Kawanishi, Mutsumi Kimura. In-Ga-Zn-O memristor with double layers of different oxygen vacancy densities and long-term memory towards neuromorphic applications. Japanese Journal of Applied Physics. 2023. 62. 5. 058002-058002
Development of Oxide Semiconductor
((SID South Taiwan Student Division) 2023)
Relationships between the Defects and Electrical Properties of Oxide Semiconductor
(CMOSETR 2016)
Low temperature deposition of SiO<sub><i>x</sub></i> insulator film with newly developed facing electrodes chemical vapor deposition
(International Conference on Small Science 2015 (ICSS 2015) 2015)
(12) SID’15 Display week 2015 報告(AMDセッション)
(2015)
Comparison of Defects in Oxide Semiconductor Evaluated by ESR
(Energy Materials and Nanotechnology, Qingdao 2015)
2010/11 - Thin Film Materials and Devices Meeting (Japanese) Best Paper Award (Presenter) Fabrication of ZnO thin film phosphor and induced luminescence center
2010/01 - Journal of Vacuum Science and Technology, A 15 th place Top 20 Most Downloaded Articles, January 2010 Crystallinity and Resistivity of ZnO thin films with indium implantation and post annealing
2006/12 - 13th International Display Workshops 06 (IDW06) Poster Paper Award (Co-author) Low-Temperature Synthesis of SiO2 Insulator by ICP-CVD Using Tetramethylsilane
2006/05 - Society for Information Display 2006 (SID2006) Distinguished Contribued Paper Award (Co-author) High mobility top-gate ZnO-TFTs for AMLCDs